| PART |
Description |
Maker |
| 74LCX16245 |
LOWVOLTAGE CMOS 16-BIT BUS TRANSCEIVER (3-STATE)WITH 5V TOLERANT INPUTS AND OUTPUTS
|
STMicro
|
| AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| MM74HC540 MM74HC540MTC MM74HC540N MM74HC540SJ MM74 |
Inverting Octal 3-STATE Buffers
Inverting Octal 3-STATE Buffer Octal 3-STATE Buffer
Inverting Octal 3-STATE Buffer • Octal 3-STATE Buffer
1.5 A, 260 kHz Low Voltage Buck Regulators with External Bias; Package: DFN18 6x5, 0.5p; No of Pins: 18; Container: Tape and Reel; Qty per Container: 2500
Inverting Octal 3-STATE Buffer Octal 3-STATE Buffer
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AK4563A AK4563AVF |
Low Power 16bit 4ch ADC & 2ch DAC with ALC
Low Power 16bit 4ch ADC & 2ch DAC with ALC 低功6通道ADC
|
Asahi Kasei Microsystems Co.,Ltd
Asahi Kasei Microsystems Co., Ltd.
|
| KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M12L16161A-5TG2Q M12L16161A-7TG2Q M12L16161A2Q |
512K x 16Bit x 2Banks
|
Elite Semiconductor Memory Technology Inc.
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4M51163PC-X |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
